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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 23, Number 5
BKCSDE 23(5)
May 20, 2002 

Zirconium Titanate Thin Film Prepared by Surface Sol-Gel Process and Effects of Thickness on Dielectric Property
Chy Hyung Kim, Moonhee Lee
ZrTiO4 film, Surface sol-gel process, Thickness-dependent dielectric constant, Series-connected capacitor model.
Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on Pt/Ti/SiO2/Si(100) substrate, following pyrolysis at 450℃, and annealing it at 770 ℃. The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, 6.9Å, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.
741 - 744
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