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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 24, Number 7
BKCSDE 24(7)
July 20, 2003 

MOCVD of GaN Films on Si Substrates Using a New Single Precursor
Seonmi Song, Sun Sook Lee, Seung Ho Yu, Taek-Mo Chung, Chang Gyoun Kim, Soon-Bo Lee, Yunsoo Kim
Azidodiethylgallium methylamine adduct, Hexagonal gallium nitride, Metal organic chemical vapor deposition, Single precursor
Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et2Ga(N3)×NH2Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.
953 - 956
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