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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 25, Number 12
BKCSDE 25(12)
December 20, 2004 

 
Title
Luminescence Characteristics of Red Light Emitting YVO4:Eu Thin-Film Phosphors Deposited on Si Substrate Using Pulsed Laser Deposition
Author
Dong-Kuk Kim, Weekyung Kang*
Keywords
Yttrium vanadate, Phosphor, Thin film, Pulsed laser deposition
Abstract
Europium doped yttrium vanadate (YVO4:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of YVO4:Eu films at post annealing temperature in the range of 550 oC-1150 oC indicating that films were preferentially (200) oriented at post annealing temperature above 950 oC. Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from 5D1 level of Eu3+ show the great concentration dependency, which can be used as a good parameter to control the composition of YVO4:Eu thin film.
Page
1859 - 1862
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