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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 28, Number 6
BKCSDE 28(6)
June 20, 2007 

Photochemical Hydrogen Evolution in K4Nb6O17 Semiconductor Particles Sensitized by Phosphonated Trisbipyridine Ruthenium Complexes
Young Hee Jung, Hyun Kwan Shim, Hyun Woo Kim, Yeong Il Kim*
Layered metal oxide semiconductor, K4Nb6O17, Phosphonated trisbipyridine ruthenium complexes, Water splitting
Three different phosphonated trisbipyridine ruthenium complexes, [(4-CH3-4'-CH2PO(OH)2-2,2'-bipyridine)- (bpy)2Ru]·(PF6)2 (Ru-P1), [(4-CH3-4'-CH2PO(OH)2-2,2'-bipyridine)3Ru]·(PF6)2 (Ru-P2), and [(4,4'-CH2PO- (OH)2-2,2'-bipyridine)3Ru]·(PF6)2 (Ru-P3) were synthesized and their photochemical and electrochemical properties were studied. These ruthenium complexes were strongly adsorbed on the surface of the layered metal oxide semiconductor K4Nb6O17 that was partially acid-exchanged and sensitized up to pH 10, while the carboxylated ruthenium complex, (4,4'-COOH-2,2'-bipyridine)3Ru·Cl2 (Ru-C) that was previously studied was sensitized only below pH 4. The visible light water reduction at K4Nb6O17 that was internally platinized and sensitized by these phosphonated Ru-complexes was comparatively studied using a reversible electron donor iodide.
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