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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 28, Number 6
BKCSDE 28(6)
June 20, 2007 

Anchoring Cadmium Chalcogenide Quantum Dots (QDs) onto Stable Oxide Semiconductors for QD Sensitized Solar Cells
Hyo Joong Lee*, Dae-Young Kim, Jung-Suk Yoo, Jiwon Bang, Sungjee Kim, Su-Moon Park*
Quantum dot, Dye-sensitized solar cell, Quantum dot sensitization
Anchoring quantum dots (QDs) onto thermodynamically stable, large band gap oxide semiconductors is a very important strategy to enhance their quantum yields for solar energy conversion in both visible and near-IR regions. We describe a general procedure for anchoring a few chalcogenide QDs onto the titanium oxide layer. To anchor the colloidal QDs onto a mesoporous TiO2 layer, linker molecules containing both carboxylate and thiol functional groups were initially attached to TiO2 layers and subsequently used to capture dispersed QDs with the thiol group. Employing the procedure, we exploited cadmium selenide (CdSe) and cadmium telluride (CdTe) quantum dots (QDs) as inorganic sensitizers for a large band gap TiO2 layer of dye-sensitized solar cells (DSSCs). Their attachment was confirmed by naked eyes, absorption spectra, and photovoltaic effects. A few QD-TiO2 systems thus obtained have been characterized for photoelectrochemical solar energy conversion.
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