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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 31, Number 9
BKCSDE 31(9)
September 20, 2010 

Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition
Yo Sep Min*, Cheng Jin An, Seong Keun Kim, Jaewon Song, Cheol Seong Hwang
ZnO, Conducting, Atomic layer deposition, Thin film
ZnO thin films were grown on Si or SiO2/Si substrates, at growth temperatures ranging from 150 to 400 oC, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of 10-3 Ωcm. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of 3.8 × 10-3 ~ 19.0 Ωcm depending on the exposure time of ozone.
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