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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 34, Number 6
BKCSDE 34(6)
June 20, 2013 

Correlation Between Lateral Photovoltaic Effect and Conductivity in p-type Silicon Substrates
Seung-Hoon Lee, Muncheol Shin, Seongpil Hwang, Sung Heum Park, Jae-Won Jang*
Lateral photovoltaic effect (LPE), Lateral photovoltaic voltage (LPV), Conductivity, Correlation coefficient, Four-wire method
The lateral photovoltaic effect (LPE) can be observed in semiconductors by irradiating a light spot position between electrodes on sample’s surface. Because lateral photovoltaic voltage (LPV) is sensitively changed by light spot position, a LPE device has been tried as a position-sensitive detector. This study discusses the correlation between LPV and conductivity in p-type silicon and nano-structured Au deposited p-type silicon (nano-Au silicon), respectively. Conductivity measurement of the sample was carried out using the four-wire method to eliminate contact resistance, and conductivity dependence on LPV was simultaneously measured by changing the light irradiation position. The result showed a strong correlation between conductivity and LPV in the p-type silicon sample. The correlation coefficient was 0.87. The correlation coefficient between LPV and conductivity for the nano-Au silicon sample was 0.41.
1845 - 1847
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