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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 18, Number 7
BKCSDE 18(7)
July 20, 1997 

The Influence of Cyclic Treatments with H2O2 and HF Solutions on the Roughness of Silicon Surface
Hye-Young Lee, Choong Hun Lee, Hyeongtag Jeon, Dongwoon Jung*
The influence of cyclic treatments with H2O2/DIW (1 : 10) and HF/DIW (1 : 100) on the roughness of silicon surface in the wet chemical processing was investigated by atomic force microscopy (AFM). During the step of the SC-1 cleaning, there is a large increase in roughness on the silicon surface which will result in the poor gate oxide breakdown properties. The roughness of the silicon wafer after the SC-1 cleaning step was reduced by cyclic treatments of hydrogen peroxide solution and hydrofluoric acid solution instead of HF-only cleaning. AFM images after each step clearly illustrated that the average roughness of silicon surface after three times treatments with H2O2 and HF solutions was reduced by 10 times compared with that after the SC-1 cleaning step.
737 - 740
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