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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 19, Number 6
BKCSDE 19(6)
June 20, 1998 

Relaxation of Photogenerated Carriers under He, H2, Co2 and O2 on ZnO
Chong soo Han, Hye Jung Kim, Jin Jun
The relaxation process of photogenerated carriers was investigated using conductivity measurement on ZnO under He, H,, CO, and O2. The process was well explained with the rate constant of reaction or recombination of hole and electron, kh and ke (kh > ke), respectively. Generally, kh increased with the pressure of the gases. The slope of kh with respect to the pressure increased in the order of H2 < He < CO2, while kh of O2 was sensitive to the history of the sample. The relaxation process on ZnO which was exposed to oxygen at 298 K and 573 K was observed during the illumination at 298 K and it was found that the rate constant of hole decreased with illumination time. From the result, it was suggested that the rate constant of photogenerated excess carriers was affected by the surface barrier of the semiconductor.
676 - 680
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